| PART |
Description |
Maker |
| AS3990 |
UHF RFID single chip reader EPC Class1 Gen2 compatible
|
austriamicrosystems AG
|
| C4123 C5334 C4124 C4133 C4323 C4134 C4324 C3323 C1 |
MEMS digital output motion sensor ultra low-power high performance 3-axes "nano" accelerometer
18-STAGE STATIC SHIFT REGISTER
MEMS digital output motion sensor ultra low-power high performance 3-axes nano accelerometer
MEMS inertial sensor 3-axis ultracompact linear accelerometer
MEMS inertial sensor: 3-axis - ± 2g/± 6g digital output low voltage linear accelerometer
LOW DROP POWER SCHOTTKY RECTIFIER
13.56 MHz short-range contactless memory chip with 4096-bit EEPROM, anticollision and anti-clone functions
Memory tag IC at 13.56 MHz, with 64-bit unique ID and WORM user area, ISO 15693 and ISO 18000-3 Mode 1 compliant
13.56 MHz short-range contactless memory chip with 4096-bit EEPROM and anticollision functions
13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions
Turbo 2 ultrafast high voltage rectifier
5V, 16Kbit (2Kb x 8) ZEROPOWER SRAM
Dual decade counter
3.3V, 256Kbit (32Kbit x 8) ZEROPOWER® SRAM
Analog multiplexer/demultiplexer with address latch : single 8 channel
5.0V or 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM
TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Quad bilateral switch
5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER® SRAM
Dual J-K flip flop with preset and clear
4-bit magnitude comparator
2048-bit EEPROM tag IC at 13.56 MHz, with 64-bit UID and Password, ISO15693 and ISO18000-3 Mode 1 compliant
MEMS inertial sensor: 3-axis - /-2g/6g ultracompact linear accelerometer 光电
432-bit UHF, EPCglobal Class1 Generation2 and ISO 18000-6C, contactless memory chip with user memory 光电
|
NXP Semiconductors N.V.
STMicroelectronics N.V.
|
| MH32S64APHB-8 MH32S64APHB-7 MH32S64APHB-6 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM 2147483648位（33554432 -文字4位）同步DRAM
2 /147 /483 /648-BIT (33 /554 /432 - WORD BY 64-BIT)Synchronous DRAM
|
Mitsubishi Electric, Corp.
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MH32S72VJA-6 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| M6MGD967W3 |
100,663,296-BIT (6,291,456-WORD BY 16-BIT) CMOS FLASH MEMORY &33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM
|
RENESA
|
| M6MGD137W34DWG |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
| MH32S64PHB-6 B99033 |
From old datasheet system
2,147,483,648-BIT ( 33,554,432-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32D64KQH-75 |
2 /147 /483 /648-BIT (33 /554 /432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| MPR600006 MPR6000 |
Multi-Protocol RFID Reader Module EPC Class 0/0 Class1 and Gen2
|
WJCI[WJ Communication. Inc.]
|
|
